DocumentCode
2052291
Title
Models defect in GaAs with multicharge implantation
Author
Novosyadly, Stepan ; Sorokhtej, Taras
Author_Institution
Dept. of radiophysic & Electron., Precarpathian Nat. Univ. nmd V. Stefanyk, Ivao-Frankivsk, Ukraine
fYear
2010
fDate
23-27 Feb. 2010
Firstpage
351
Lastpage
351
Abstract
In this paper the models defect in GaAs with multicharge implantation are given.
Keywords
III-V semiconductors; crystal defects; gallium arsenide; ion implantation; GaAs; models defect; multicharge implantation; Amorphous materials; Annealing; Capacitive sensors; Dairy products; Embryo; Gallium arsenide; Ion implantation; Particle beam optics; Silicon; Temperature dependence; cluster; cracks; dislocation; multicharge implantation; pores;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location
Lviv-Slavske
Print_ISBN
978-966-553-875-2
Electronic_ISBN
978-966-553-901-8
Type
conf
Filename
5445971
Link To Document