Title :
Rashba effect in a FM/I/2DEG/I/FM structure
Author :
Jiang, Y. ; Jalil, M.B.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we consider the ballistic charge transport across a ferromagnet(FM)/tunnel barrier(I)/two dimensional electron gas (2DEG)/I/FM structure, where a thin insulating (I) barrier has been interested to overcome the conductivity mismatch problem at the FM-2DEG interface. The Rashba spin-orbit interaction which arises due to a gate-induced structural inversion asymmetry. The combined Rashba interaction and spin-dependent transmission across the barriers give rise to a high degree of spin polarization of current within the 2DEG. The device also exhibits a strong magnetoconductance (Mc) behavior when the relative magnetisation of the FM contacts is switched.
Keywords :
MIS structures; ballistic transport; band structure; electrical conductivity; electron spin polarisation; ferromagnetic materials; magnetisation; magnetoresistance; spin-orbit interactions; two-dimensional electron gas; Rashba effect; Rashba spin-orbit interaction; ballistic charge transport; ferromagnet/tunnel barrier/two dimensional electron gas structure; gate-induced structural inversion asymmetry; magnetisation; magnetoconductance behavior; mismatch conductivity; spin polarization; spin-dependent transmission; thin insulating barrier; Electrodes; Electrons; Large Hadron Collider; Magnetization; Optimal control;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230773
