Cluster-free B-doped a-Si:H films deposited using SiH4 + B10H14 multi-hollow discharges

Author

Nakahara, Kenta ; Kawashima, Yuki ; Sato, Muneharu ; Matsunaga, Takeaki ; Yamamoto, Kousuke ; Nakamura, William Makoto ; Yamashita, Daisuke ; Matsuzaki, Hidefumi ; Uchida, Giichiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu

Author_Institution

Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan

fYear

2010

fDate

21-24 Nov. 2010

Firstpage

2216

Lastpage

2218

Abstract

We have deposited cluster-free B-doped a-Si:H films using a SiH₄+B₁₀H₁₄ multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R = [B₁₀H₁₄]/[SiH₄] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8 nm/s R = 0.0 % to 2.2 nm/s for R = 0.53%, but SiH emission intensity is almost constant for R = 0 - 2.0%. These results suggest B_xH_y radicals enhance surface reaction probability of SiH₃ radicals. The optical bandgap of films is around 1.9 eV, being larger than that of conventional B-doped films.

Keywords

amorphous semiconductors; boron; elemental semiconductors; energy gap; hydrogen; optical constants; plasma CVD; semiconductor growth; semiconductor thin films; silicon; surface chemistry; Si:H,B; cluster-free B-doped a-Si:H films; gas flow rate; multihollow discharge plasma CVD; optical bandgap; plasma emission; surface reaction; amorphous silicon; decaborane; multi-hollow discharges;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2010 - 2010 IEEE Region 10 Conference

Conference_Location

Fukuoka

ISSN

pending

Print_ISBN

978-1-4244-6889-8

Type

conf

DOI

10.1109/TENCON.2010.5686686

Filename

5686686