DocumentCode :
20560
Title :
A Wideband Doherty Architecture With 36% of Fractional Bandwidth
Author :
Piazzon, L. ; Giofre, R. ; Colantonio, P. ; Giannini, F.
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
Volume :
23
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
626
Lastpage :
628
Abstract :
This letter presents the design and characterization of a novel wideband Doherty architecture. Both input splitter and output combiner are realized by means of two-sections branch-line alike couplers. The realized prototype based on commercial GaN active devices shows more than 36% of fractional bandwidth, from 1.67 to 2.41 GHz. In this frequency range, the measured drain efficiency is within 59% and 43% at 6 dB of output power back-off and within 72% and 53% at saturation, with an output power around 41 dBm. More than 47% average efficiency and less than -40 dBc adjacent channel power ratio are measured applying a 20 MHz LTE digitally pre-distorted signal when the average output power is around 4 W.
Keywords :
III-V semiconductors; Long Term Evolution; UHF amplifiers; gallium compounds; wideband amplifiers; GaN; LTE digitally pre-distorted signal; Long Term Evolution; UHF amplifiers; adjacent channel power ratio; branch-line alike couplers; drain efficiency; frequency 1.67 GHz to 2.41 GHz; frequency 20 MHz; wideband Doherty architecture; Broadband communication; Doherty amplifiers; Impedance; Power generation; Wideband; Broadband; Doherty amplifier; GaN; high efficiency; wideband;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2013.2281413
Filename :
6606821
Link To Document :
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