A great Ultra Wideband (3.1–10.6-GHz) LNA in 0.18-μm (CMOS) for UWB pulse-radio systems applications

Author

Dehrizi, Hadi Goodarzi ; Haddadnia, Javad

Author_Institution

Fac. of Electr. Eng., Sabzevar Tarbiat Moallem Univ., Sabzevar, Iran

fYear

2012

fDate

20-23 March 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents an Ultra-Wideband (UWB) Low-Noise Amplifier (LNA) which its frequency range is from 3.1 to 10.6 GHz using 0.18-μm CMOS at 25°C. Simulation results show that the IIP3 is about 1dBm at 6GH and the Noise Figure (NF) ranges from 3.41-4.47 dB over the band of interest. Input matching is better than -12.81dB, S₁₂ below -27.51 dB, S₂₂ below -13.05 dB, S₂₁ 10.16 ± 1 and the power consume is 6.36mW at 1V supply voltage. The proposed LNA topology is very suitable for UWB pulse-radio system applications.

Keywords

CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; ultra wideband communication; CMOS process; UWB pulse-radio systems; frequency 3.1 GHz to 10.6 GHz; noise figure 3.41 dB to 4.47 dB; power 6.36 mW; size 0.18 mum; temperature 25 degC; ultrawideband LNA topology; voltage 1 V; CMOS integrated circuits; Impedance matching; Low-noise amplifiers; Noise measurement; Power demand; Ultra wideband technology; Wideband; CMOS; Low-Noise Amplifier (LNA); Ultra Wideband (UWB); low power;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on

Conference_Location

Chemnitz

Print_ISBN

978-1-4673-1590-6

Electronic_ISBN

978-1-4673-1589-0

Type

conf

DOI

10.1109/SSD.2012.6198086

Filename

6198086