Nanometer-scale selective epitaxy of InAs quantum dots via indium segregation

Author

Yeoh, T.S. ; Elarde, V.C. ; Swint, R.B. ; Wu, E.R. ; Coleman, J.J.

Author_Institution

Illinois Univ., Urbana, IL, USA

Volume

2

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

484

Abstract

We report on recent results utilizing pseudomorphic In_xGa_1-xAs films in order to affect the growth, organization and structure of InAs quantum dots. Pseudomorphic InGaAs films exhibit interesting properties due to strain effects. Given time, In_xGa_1-xAs films release various amounts of indium by surface segregation. This segregated layer of InAs can act to decrease the additional InAs necessary to reach the 2D to 3D transition coverage. This process enables an oxideless, single growth step of quantum dots suitable for use in quantum dot cellular automata computing and other low dimensional electronic systems.

Keywords

III-V semiconductors; epitaxial growth; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; surface segregation; In_xGa_1-xAs; In_xGa_1-xAs film organisation; In_xGa_1-xAs films growth; In_xGa_1-xAs films structure; InAs; InAs quantum dots; growth step; indium segregation; low dimensional electronic systems; nanometer scale selective epitaxy; quantum dot cellular automata computing; strain effects; surface segregation; transition coverage; Assembly; Epitaxial growth; Etching; Gallium arsenide; Indium gallium arsenide; Lithography; Optical films; Quantum computing; Quantum dots; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1230951

Filename

1230951