IGBT high accuracy behavioral macromodel

Author

Asparuhova, Katya ; Grigorova, Tsvetana

Author_Institution

Dept. of Electron. & Electron. Technol., Tech. Univ. - Sofia, Sofia

fYear

2008

fDate

11-14 May 2008

Firstpage

185

Lastpage

188

Abstract

The paper presents IGBT macromodel, which is built using the configuration of the Hammerstein model. The DC part of the model represents the slope of the output characteristic in the saturation region. The exponential functions are using in the dynamic block. For the purposes of the optimization the investigated model is implemented first in MATLAB/Simulink and than in PSpice simulator that resulting in good accuracy and reduced CPU time. The parameter extraction and optimization are fulfilled by MATLAB programs. The good agreement (around 3%) between the simulation and experimental results can be observed at the end of the paper.

Keywords

insulated gate bipolar transistors; optimisation; power semiconductor devices; semiconductor device models; Hammerstein model; IGBT macromodel; MATLAB programs; exponential functions; insulated gate bipolar transistors; optimization; parameter extraction; power devices; Capacitors; Insulated gate bipolar transistors; MATLAB; MOSFETs; Mathematical model; Microelectronics; Parameter extraction; Region 10; Solid modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-1881-7

Electronic_ISBN

978-1-4244-1882-4

Type

conf

DOI

10.1109/ICMEL.2008.4559254

Filename

4559254