Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

Author

Zhao, Y.W. ; Dong, Z.Y. ; Zhang, Y.H. ; Li, Ch.J.

Author_Institution

Mat. Sci. Center, Chinese Acad. of Sci., Beijing, China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

15

Lastpage

18

Abstract

Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900°C for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP. TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.

Keywords

III-V semiconductors; annealing; crystal defects; deep level transient spectroscopy; high-temperature effects; impurity states; indium compounds; iron; thermally stimulated currents; 10 hour; 900 degC; Fe-doped semi insulating indium phosphide; InP:Fe; deep level transient spectroscopy; high temperature annealing; shallow donor defect; thermally stimulated current spectroscopy; Annealing; Conductivity; Electron mobility; Hall effect; Indium phosphide; Materials science and technology; Semiconductivity; Semiconductor materials; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511375

Filename

1511375