Title :
Patterning Si3N4 and TiN with scanning probe lithography
Author :
Chien, F.S.-S. ; You, Y.-C. ; Yao, B.C. ; Hsieh, J.-L. ; Lai, D.-Y. ; Lai, C.-S. ; Jeng, D.
Author_Institution :
Center for Meas. Stand., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
Processes to pattern nanostructures on the Si3N4 and TiN films based on scanning probe lithography have been demonstrated. The patterned Si3N4 and TiN films were used as etch masks to produce nanostructure on Si substrates. The oxide growth kinetics of both nitride films was studied. The oxide height vs. oxidation period obeys the logarithmic relationship. TiN is superior to Si3N4 as etching mask due to its high oxide growth rate and better performance for dry etching.
Keywords :
masks; nanolithography; oxidation; reaction rate constants; silicon compounds; sputter etching; thin films; titanium compounds; Si; Si substrates; Si3N4; Si3N4 films; TiN; TiN films; dry etching; etch masks; nanostructures; nitride films; oxidation; oxide growth kinetics; oxide growth rate; oxide height; scanning probe lithography; Atomic force microscopy; Dry etching; Lithography; Nanostructures; Oxidation; Probes; Semiconductor films; Substrates; Tin; Wet etching;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231031
