DocumentCode
20607
Title
Design of High-Speed Energy-Efficient Masking Error Immune PentaMTJ-Based TCAM
Author
Gupta, Mohit Kumar ; Hasan, Mohammad
Author_Institution
Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India
Volume
51
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
1
Lastpage
9
Abstract
The main challenge in ternary content addressable memory (TCAM) design is to reduce the power consumption associated with searching without the increase in delay. This paper proposes a novel PentaMTJ-based TCAM and then compares its delay and power consumption with the previously reported MTJ-based TCAM. TCAM is comprised of PentaMTJ cell, which is used for the storage of information, and a precharge sense amplifier (PCSA) for its sensing. A VerilogA model of the PentaMTJ along with 45 nm CMOS technology is used for the simulation. A power reduction of 17.64 times with minor delay degradation of 1.081 times is obtained compared with previously reported TCAMs. This leads to power delay product improvement of 16.38 times for 576 b TCAM.
Keywords
MRAM devices; magnetic tunnelling; CMOS technology; PentaMTJ cell; VerilogA model; high-speed energy-efficient masking error immune PentaMTJ-based ternary content addressable memory design; information storage; minor delay degradation; power consumption; power delay product improvement; power reduction; precharge sense amplifier; Computer aided manufacturing; Computer architecture; Magnetic tunneling; Resistance; Sensors; Transistors; Writing; Associative memories; PentaMTJ; content addressable memory (CAM)/ternary CAM (TCAM); magnetic memories; magnetic tunnel junction (MTJ); memory array; precharge sense amplifier (PCSA); spintronics;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2014.2346472
Filename
6874586
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