• DocumentCode
    20607
  • Title

    Design of High-Speed Energy-Efficient Masking Error Immune PentaMTJ-Based TCAM

  • Author

    Gupta, Mohit Kumar ; Hasan, Mohammad

  • Author_Institution
    Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India
  • Volume
    51
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    The main challenge in ternary content addressable memory (TCAM) design is to reduce the power consumption associated with searching without the increase in delay. This paper proposes a novel PentaMTJ-based TCAM and then compares its delay and power consumption with the previously reported MTJ-based TCAM. TCAM is comprised of PentaMTJ cell, which is used for the storage of information, and a precharge sense amplifier (PCSA) for its sensing. A VerilogA model of the PentaMTJ along with 45 nm CMOS technology is used for the simulation. A power reduction of 17.64 times with minor delay degradation of 1.081 times is obtained compared with previously reported TCAMs. This leads to power delay product improvement of 16.38 times for 576 b TCAM.
  • Keywords
    MRAM devices; magnetic tunnelling; CMOS technology; PentaMTJ cell; VerilogA model; high-speed energy-efficient masking error immune PentaMTJ-based ternary content addressable memory design; information storage; minor delay degradation; power consumption; power delay product improvement; power reduction; precharge sense amplifier; Computer aided manufacturing; Computer architecture; Magnetic tunneling; Resistance; Sensors; Transistors; Writing; Associative memories; PentaMTJ; content addressable memory (CAM)/ternary CAM (TCAM); magnetic memories; magnetic tunnel junction (MTJ); memory array; precharge sense amplifier (PCSA); spintronics;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2014.2346472
  • Filename
    6874586