DocumentCode :
2061397
Title :
4.1 22nm Next-generation IBM System z microprocessor
Author :
Warnock, James ; Curran, Brian ; Badar, John ; Fredeman, Gregory ; Plass, Donald ; Yuen Chan ; Carey, Sean ; Salem, Gerard ; Schroeder, Friedrich ; Malgioglio, Frank ; Mayer, Guenter ; Berry, Christopher ; Wood, Michael ; Yiu-Hing Chan ; Mayo, Mark ; Isak
Author_Institution :
IBM Syst. & Technol., Yorktown Heights, NY, USA
fYear :
2015
fDate :
22-26 Feb. 2015
Firstpage :
1
Lastpage :
3
Abstract :
The next-generation System z design introduces a new microprocessor chip (CP) and a system controller chip (SC) aimed at providing a substantial boost to maximum system capacity and performance compared to the previous zEC12 design in 32nm [1,2]. As shown in the die photo, the CP chip includes 8 high-frequency processor cores, 64MB of eDRAM L3 cache, interface IOs (“XBUS”) to connect to two other processor chips and the L4 cache chip, along with memory interfaces, 2 PCIe Gen3 interfaces, and an I/O bus controller (GX). The design is implemented on a 678 mm2 die with 4.0 billion transistors and 17 levels of metal interconnect in IBM´s high-performance 22nm high-x CMOS SOI technology [3]. The SC chip is also a 678 mm2 die, with 7.1 billion transistors, running at half the clock frequency of the CP chip, in the same 22nm technology, but with 15 levels of metal. It provides 480 MB of eDRAM L4 cache, an increase of more than 2× from zEC12 [1,2], and contains an 18 MB eDRAM L4 directory, along with multi-processor cache control/coherency logic to manage inter-processor and system-level communications. Both the CP and SC chips incorporate significant logical, physical, and electrical design innovations.
Keywords :
CMOS integrated circuits; DRAM chips; cache storage; clocks; microcontrollers; multiprocessing systems; multiprocessor interconnection networks; performance evaluation; system buses; CP chip; I/O bus controller; IBM high-performance high-κ CMOS SOI technology; L4 cache chip; PCIe Gen3 interfaces; SC chip; XBUS; clock frequency; eDRAM L3 cache; eDRAM L4 cache; eDRAM L4 directory; electrical design innovations; high-frequency processor cores; interface IO; interprocessor management; logical design innovations; maximum system capacity; memory interfaces; memory size 18 MByte; memory size 480 MByte; memory size 64 MByte; metal interconnect; microprocessor chip; multiprocessor cache control-coherency logic; next-generation IBM System z microprocessor; physical design innovations; size 22 nm; system controller chip; system-level communications; transistors; zEC12 design; Arrays; Bandwidth; Clocks; Frequency measurement; Logic gates; Program processors; Thermal analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
Type :
conf
DOI :
10.1109/ISSCC.2015.7062930
Filename :
7062930
Link To Document :
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