Self-aligned multilayer dielectric “dummy gate” technology for L-, S- and X-band GaAs MMICs fabrication

This paper demonstrates the main aspects of the technology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayer dielectric “dummy gate” used for fabrication of the metal-semiconductor field effect transistor with 0.5 microns gate length and ion implantation for channel, drain and source regions formation is described. Methods of front- and backside processing and specifications of control MMICs such as L-, S- and X-band switches, attenuators and phase-shifters are described.