Session 7 overview: Non-volatile memory solutions: Memory subcommittee

Strong demand for high-density low-power and reliable non-volatile Memory (NVM) Solutions continues to enable data centers, advanced automotive control, and wearables. In ISSCC 2015, a new 64Gb MLC Flash in 15nm CMOS technology is optimized for low power. Another 128Gb V-NAND with 3b/cell is introduced at 1Gb/s I/O rate. A high-speed 28nm embedded SG-MONOS Flash technology is developed for automotive industry. Aside from memory technology, system level innovations are critical to achieve high-speed reliable NVM solutions. A frequency-boosting interface chip is shown to stack 16-die 128Gb Flash at 1GB/s interface. An SSD controller is implemented for high-speed and reliable enterprise-level SSD with TLC Flash. As SRAM and DRAM scaling faces serious challenges, high-speed emerging memories needed to continue area and cost reduction. Two Mb level STTRAM macro papers are shown to achieve sub-10ns read speed, potentially replacing SRAM and DRAM.