Title :
Growth and characterization of highly Yb3+-doped KY(WO4)2 thin layers
Author :
Aravazhi, S. ; Geskus, D. ; van Dalfsen, K. ; Gunther, D. ; Pollnau, M.
Author_Institution :
Integrated Opt. Microsyst. Group, Univ. of Twente, Enschede, Netherlands
Abstract :
Growth and characterization of highly Yb3+-doped KY(WO4)2 thin layers is reported. Liquid phase epitaxial growth and characterization of highly Yb3+-doped (15, 20, and 47.5at%) layers on (010)-oriented, pure KYW substrates is shown. At elevated growth temperatures of 920-925°C a low level of supersaturation was achieved, leading to slower growth rate. This approach resulted in lattice-matched, crack-free layers of thickness ranging from 10 to 50 μm. The doping concentrations in a grown layer were determined by laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS).
Keywords :
doping profiles; epitaxial layers; laser ablation; liquid phase epitaxial growth; mass spectroscopic chemical analysis; optical fabrication; optical films; potassium compounds; refractive index; ytterbium; yttrium compounds; KY(WO4)2:Yb; crack-free layers; doping concentrations; laser ablation inductively coupled plasma mass spectrometry; lattice-matched layers; liquid phase epitaxial growth; refractive index; size 10 mum to 50 mum; supersaturation; temperature 920 degC to 925 degC; thin layers; Chemistry; Doping; Substrates;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942787
