Title :
Excitation quenching in Er3+-doped Al2O3 amplifiers
Author :
Agazzi, L. ; Wörhoff, K. ; Pollnau, M.
Author_Institution :
Integrated Opt. Microsyst. Group, Univ. of Twente, Enschede, Netherlands
Abstract :
Excitation quenching in Er3+-doped Al2O3 amplifiers is reported. The growth method allows for straightforward deposition on silicon wafers and direct integration with silicon photonic circuits. Net gain over a bandwidth of 80 nm (1500-1580 nm) and with a peak value of 2.0 dB/cm at 1533 nm was measured in the waveguide amplifiers . By fitting the gain measurements with a simple Er3+ rate-equation model, the values for the coefficient WETU of energy-transfer upconversion (ETU) between neighboring Er3+ ions is obtained, which has a detrimental influence on the amplifier performance.
Keywords :
aluminium compounds; amplifiers; erbium; integrated optics; optical fabrication; optical waveguides; radiation quenching; Al2O3:Er; Si; energy-transfer upconversion; excitation quenching; gain measurements; integrated optics; silicon photonic circuits; silicon wafers; waveguide amplifiers; wavelength 1533 nm;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942789
