Title :
A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasitics
Author :
Suligoj, Tomislav ; Biljanovic, Petar ; Sin, Johnny K O ; Wang, Kang L.
Author_Institution :
Dept. of Electron., Zagreb Univ., Croatia
Abstract :
A novel horizontal current bipolar transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs, is presented. The HCBT is processed by a low-cost technology in the (111) sidewalls on the [110] wafers, with minimized volume of the extrinsic regions, resulting in reduced parasitics. The HCBT structure exhibits the highest fτ (30.4 GHz) and fTBVCEO product (127.7 GHzV) among the lateral bipolar transistors.
Keywords :
millimetre wave bipolar transistors; (111) sidewalls; 30.4 GHz; [110] wafers; extrinsic region volume minimization; horizontal current bipolar transistor; lateral bipolar transistors; low-cost HCBT; parasitics reduction; pillar-like MOSFET integration; Bipolar transistors; CMOS process; CMOS technology; Capacitance; Cutoff frequency; Doping profiles; Etching; Fabrication; Ion implantation; MOSFETs;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365739
