• DocumentCode
    2064280
  • Title

    A 5-GHz silicon bipolar radio transceiver front-end

  • Author

    Italia, Alessandro ; Ragonese, Egidio ; La Paglia, L. ; Palmisano, Giuseppe

  • Author_Institution
    DIEES, Catania Univ., Italy
  • fYear
    2004
  • fDate
    13-14 Sept. 2004
  • Firstpage
    120
  • Lastpage
    123
  • Abstract
    A 5-GHz radio transceiver front-end chipset, including an image-reject down-converter and a dB-linear variable-gain up-converter, was implemented in a 46-GHz-fT pure silicon bipolar technology. The down-converter has a 4-dB noise figure, a 22-dB power gain and a 1-dB input compression point of -20 dBm. It also exhibits an image rejection ratio higher than 60-dB. The up-converter achieves a 1-dB output compression point of 6-dBm, a 13-dB power gain, providing a linear-in-dB gain characteristic with a dynamic range of 30-dB. The overall current consumption is 68-mA from a 3-V supply voltage.
  • Keywords
    MMIC frequency convertors; bipolar MMIC; elemental semiconductors; silicon; transceivers; 13 dB; 22 dB; 3 V; 4 dB; 46 GHz; 5 GHz; 68 mA; Si; bipolar radio transceiver front-end; dB-linear variable-gain up-converter; front-end chipset; image rejection ratio; image-reject down-converter; Active inductors; Filters; Image coding; MIM capacitors; Noise figure; Radio transceivers; Radiofrequency amplifiers; Silicon; Spirals; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
  • Print_ISBN
    0-7803-8618-3
  • Type

    conf

  • DOI
    10.1109/BIPOL.2004.1365760
  • Filename
    1365760