DocumentCode
2064280
Title
A 5-GHz silicon bipolar radio transceiver front-end
Author
Italia, Alessandro ; Ragonese, Egidio ; La Paglia, L. ; Palmisano, Giuseppe
Author_Institution
DIEES, Catania Univ., Italy
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
120
Lastpage
123
Abstract
A 5-GHz radio transceiver front-end chipset, including an image-reject down-converter and a dB-linear variable-gain up-converter, was implemented in a 46-GHz-fT pure silicon bipolar technology. The down-converter has a 4-dB noise figure, a 22-dB power gain and a 1-dB input compression point of -20 dBm. It also exhibits an image rejection ratio higher than 60-dB. The up-converter achieves a 1-dB output compression point of 6-dBm, a 13-dB power gain, providing a linear-in-dB gain characteristic with a dynamic range of 30-dB. The overall current consumption is 68-mA from a 3-V supply voltage.
Keywords
MMIC frequency convertors; bipolar MMIC; elemental semiconductors; silicon; transceivers; 13 dB; 22 dB; 3 V; 4 dB; 46 GHz; 5 GHz; 68 mA; Si; bipolar radio transceiver front-end; dB-linear variable-gain up-converter; front-end chipset; image rejection ratio; image-reject down-converter; Active inductors; Filters; Image coding; MIM capacitors; Noise figure; Radio transceivers; Radiofrequency amplifiers; Silicon; Spirals; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365760
Filename
1365760
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