Title :
Ratio based direct extraction of small-signal parameters for SiGe HBTs
Author :
Xia, Kejun ; Niu, Guofu ; Sheridan, David ; Ansley, William E.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
Abstract :
A new direct extraction method, using a set of Z-parameter based ratios, is developed for SiGe HBTs. The input non-quasi-static effect is included to enable more accurate noise modeling. Excellent fitting with experimental data is obtained up to 60 GHz over a wide range of biasing currents.
Keywords :
Ge-Si alloys; equivalent circuits; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; 60 GHz; HBT small-signal parameters; SiGe; Z-parameter based ratios; biasing current; input nonquasistatic effect; noise modeling; ratio based direct parameter extraction; small-signal equivalent circuit; Circuit noise; Data mining; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Optimization methods; Parasitic capacitance; Physics; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365765
