DocumentCode
2064796
Title
High-voltage SiC and GaN power devices
Author
Chow, T. Paul
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
198
Lastpage
200
Abstract
Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we review the recent progress in SiC and GaN high-voltage power switching device demonstrations.
Keywords
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; high-voltage power devices; power electronics; power switching devices; wide bandgap semiconductors; Gallium nitride; Power electronics; Power semiconductor switches; Silicon carbide; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365779
Filename
1365779
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