DocumentCode :
2064923
Title :
Inverse circuit simulation based low-frequency noise extraction in SiGe HBTs
Author :
Niu, Guofu ; Tang, Jin ; Feng, Zhiming ; Sheridan, David ; Harame, David L.
Author_Institution :
Alabama Microelectronics Science and Technology Center
fYear :
2004
fDate :
13-14 Sept. 2004
Firstpage :
221
Lastpage :
224
Keywords :
Circuit noise; Circuit simulation; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Signal to noise ratio; Silicon germanium; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
Type :
conf
DOI :
10.1109/BIPOL.2004.1365785
Filename :
1365785
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2064923
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