Unified Analytical Model for Switching Behavior of Magnetic Tunnel Junction

Author

Hyein Lim ; Seungjun Lee ; Hyungsoon Shin

Author_Institution

Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea

Volume

35

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

193

Lastpage

195

Abstract

The switching time of the magnetic tunnel junction for spin-transfer torque magnetoresistive random access memory is investigated as a function of the current. We present a unified analytical model for switching time so that the problem of discontinuity around the critical current is solved. The suggested unified model shows excellent agreement with the experimental data of parallel/antiparallel states simultaneously. Furthermore, only one set of parameters is used to represent all switching regime in our model.

Keywords

MRAM devices; magnetic switching; magnetic tunnelling; antiparallel states; critical current; magnetic tunnel junction; magnetoresistive random access memory; spin transfer torque; switching behavior; switching time; unified analytical model; Analytical models; Critical current density (superconductivity); Integrated circuit modeling; Junctions; Magnetic tunneling; Switches; Torque; Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2293598

Filename

6681876