• DocumentCode
    2066686
  • Title

    90 GHz SIMMWIC Rectennas

  • Author

    Strohm, K.M. ; Buechler, J. ; Luy, J.F.

  • Author_Institution
    Daimler Benz Research Center, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
  • Volume
    1
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    608
  • Lastpage
    613
  • Abstract
    Rectifying antennas (Rectennas) have been fabricated with zero bias n- and p-Schottky barrier diodes and planar antenna structures on high-resistivity silicon substrates. The rectenna is manufactured by silicon monolithic millimeter wave integrated circuit (SIMMWIC) technology. The maximum sensitivity of the rectenna is 153 mV/(mWcm¿2) at 94 GHz. The equivalent TSS is smaller than ¿41 dBm.
  • Keywords
    Anodes; Fabrication; Metallization; Millimeter wave technology; Rectennas; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335772
  • Filename
    4135516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2066686