Title :
Thermal Design of HBT Power Transistors for Mobile and Satellite Communications
Author :
Mezui-Mintsa, R. ; Tsouli, M. ; Enkonda, Z. ; Hassaïne, N. ; Riet, M. ; Villeforceix, B. ; Konczykowska, A. ; Vuye, S. ; Wang, H.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196, avenue Henri Ravera, 92220 Bagneux (FRANCE)
Abstract :
HBT power transistors thermal analysis and its application to amplifier design are presented in this paper. Device analysis and optimization have been made with respect to the power handling capability. Power HBTs for mobile and satellite communications have been fabricated. A C-band MIC amplifier is also presented.
Keywords :
Current density; Electronic ballasts; Fingers; Frequency; Heterojunction bipolar transistors; Power amplifiers; Power transistors; Satellite communication; Temperature; Thermal resistance;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335812
