RF silicon-germaniurn circuits

Author

Bopp, Matthias

Author_Institution

Atmel Wireless & Microcontrollers, Heilbronn, Germany

fYear

2001

fDate

2001

Firstpage

167

Lastpage

173

Abstract

Silicon Germanium heterobipolar transistors have the potential for high complexity integration combined with low noise, high dynamic range, and high efficiency operation up to several GHz at attractive cost. Thus, SiGe technology has become a viable option for many functions in today´s wireless systems. This paper gives results of circuits implemented in SiGe, together with the associated trade-offs while concentrating; on cellular applications. Examples from IS95/98, a linear system, as well as GSM, a system using constant envelope modulation scheme in the 800 MHz to 2 GHz frequency range are addressed. The SiGe bipolar and SiGe BiCMOS processes these blocks are based upon are currently in production at Atmel´s fabs

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; bipolar integrated circuits; frequency synthesizers; radio receivers; radio transmitters; semiconductor materials; 800 MHz to 2 GHz; GSM system; IS95/98 system; RF SiGe circuits; SiGe; SiGe BiCMOS process; SiGe bipolar process; SiGe technology; cellular applications; constant envelope modulation scheme; wireless systems; BiCMOS integrated circuits; Chirp modulation; Circuit noise; Costs; Dynamic range; GSM; Germanium silicon alloys; Linear systems; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974302

Filename

974302