Title :
Thermal management of 3D IC integration with TSV (through silicon via)
Author :
Lau, John H. ; Yue, Tang Gong
Author_Institution :
Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
Thermal performances of 3D stacked TSV (through silicon via) chips filled with copper are investigated based on heat-transfer CFD (computational fluid dynamic) analyses. Emphases are placed on the determination of (1) empirical equations for the equivalent thermal conductive of chips with various copper-filled TSV diameters, pitches, and aspect ratios, (2) the junction temperature and thermal resistance of 3D stacking of up to 8 TSV chips, and (3) the effect of thickness of the TSV chip on its hot spot temperature. Useful design charts and guidelines are provided for engineering practice convenient.
Keywords :
computational fluid dynamics; heat transfer; integrated circuit packaging; thermal conductivity; thermal management (packaging); thermal resistance; 3D IC integration; 3D stacked TSV; 3D stacking; aspect ratio; computational fluid dynamic analysis; empirical equations; heat-transfer CFD; junction temperature; thermal management; thermal resistance; through silicon via; Computational fluid dynamics; Copper; Performance analysis; Silicon; Temperature; Thermal conductivity; Thermal management; Thermal resistance; Three-dimensional integrated circuits; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-4475-5
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2009.5074080
