Quantum mechanical modeling of advanced sub-10 nm MOSFETs

We have carried out numerical modeling of sub-10 nm double-gate Si MOSFETs with ultra-thin, intrinsic channel connecting n⁺-doped source and drain, using the self-consistent solution of the Schrodinger and Poisson equations. Two simple models of transistors with raised electrodes and with thin source and drain extensions are compared. Results show that devices of both types can be scaled to at least 5 nm gate length. However, already below ∼10 nm the exponentially growing sensitivity of transistor parameters (in particular, the gate voltage threshold) to very small variations of device size may become a major challenge for the Moore´s law extension beyond this frontier.