• DocumentCode
    2072075
  • Title

    Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green´s function formalism

  • Author

    Polizzi, Eric ; Datta, Supriyo

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    40
  • Abstract
    This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green´s Functions (NEGF) formalism and the variational form of the problem is solved using the finite element method (FEM). In this approach, the derivation of the boundary conditions at the interfaces of the device with the reservoirs, is used to calculate the self-energy functions. The FEM allows us to consider very complex geometries and non-uniform mesh, while the NEGF is a powerful formalism which will allow to include scattering in the problem. The simulations are performed by solving self-consistently the NEGF (equivalent to the open schrodinger equation in ballistic regime) for the transport problem and the Poisson equation to account for the space charge effects.
  • Keywords
    Green´s function methods; MIS devices; Poisson equation; Schrodinger equation; elemental semiconductors; finite element analysis; semiconductor device models; silicon; silicon compounds; space charge; FEM; MIS device; Poisson equation; Schrodinger equation; Si-SiO2; ballistic regime; boundary conditions; complex geometries; electron transport; finite element method; multidimensional nanoscale device modeling; nonequilibrium Green´s function formalism; nonuniform mesh; numerical simulation; quantum transport; reservoirs; scattering problem; self energy functions; space charge effects; Boundary conditions; Electrons; Finite element methods; Geometry; Green´s function methods; Multidimensional systems; Nanoscale devices; Numerical models; Numerical simulation; Reservoirs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1231709
  • Filename
    1231709