DocumentCode :
2072505
Title :
Electronic structure of vertically coupled multilayer semiconductor quantum dots in a magnetic field
Author :
Li, Y. Iming ; Lu, Hsiao-Mei
Author_Institution :
Dept. of Nano Device Technol., Nat. Nano Device Lab., Hsinchu, Taiwan
Volume :
1
fYear :
2003
fDate :
12-14 Aug. 2003
Firstpage :
99
Abstract :
In this paper coupling effects and energy spectra are investigated for vertically stacked InAs/GaAs quantum dots under magnetic fields. The Hamiltonian considers here the position- and energy-dependent quasi-particle effective mass approximation and Lande factor, the finite hard wall confinement potential, and the Ben Daniel-Duke boundary conditions. A nonlinear iterative method is applied to solve the three-dimensional problem. For small quantum dots the transition energy is dominated by the number of stacked layers. The inter-distance d between layers plays a crucial role in the tunable states of the dots. For d=1 nm, it is found that there is about 25% variation in ground state energy at zero magnetic field. We observed that the dependence of magnetic fields on the electron transition energy is depressed when the number of vertically coupled layers is increased. This study is constructive for exploring the magneto-optical phenomena and quantum optical structures.
Keywords :
III-V semiconductors; effective mass; g-factor; gallium arsenide; ground states; indium compounds; iterative methods; magneto-optical effects; quasiparticles; semiconductor quantum dots; Ben Daniel Duke boundary conditions; InAs-GaAs; Lande factor; coupling effects; electron transition energy; electronic structure; energy dependent quasi particle effective mass approximation; energy spectra; finite hard wall confinement potential; ground state energy; magnetic fields; magneto optical effect; nonlinear iterative method; position dependent quasi particle effective mass approximation; quantum optical structures; tunable states; vertically coupled multilayer semiconductor quantum dots; vertically stacked InAs/GaAs quantum dots; Boundary conditions; Couplings; Effective mass; Gallium arsenide; Iterative methods; Magnetic confinement; Magnetic fields; Magnetic multilayers; Quantum dots; Stationary state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
Type :
conf
DOI :
10.1109/NANO.2003.1231724
Filename :
1231724
Link To Document :
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