Electrothermal characterization of TFTs under the impact of an EMP

Author

Xu, Rong-Rong ; Yin, Wen-Yan ; Mao, Jun-Fa

Author_Institution

Center for Microwave & RF Technol. (CMRFT), Shanghai Jiao Tong Univ., Shanghai

fYear

2008

fDate

19-23 May 2008

Firstpage

766

Lastpage

769

Abstract

This paper is focused on electrothermal characterization of n-channel polysilicon thin-film transistors (TFTs) under the impact of an EMP. The mathematical treatment is based on hybrid time-domain finite element method (FEM), in which non-linear temperature-dependent characteristics of electrical conductivity and thermal conductivity of all materials involved are treated appropriately, and therefore, the time-dependent electronic field, current density, and temperature rise in TFTs are captured successfully and compared for different cases.

Keywords

electrical conductivity; electromagnetic pulse; elemental semiconductors; radiation effects; silicon; thermal conductivity; thin film transistors; Si; current density; electrical conductivity; electrothermal characterization; hybrid time-domain finite element method; n-channel polysilicon thin-film transistors; thermal conductivity; EMP radiation effects; Electromagnetic compatibility; Electrothermal effects; Finite element methods; Semiconductor devices; Silicon; Temperature; Thermal conductivity; Thin film transistors; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility, 2008. APEMC 2008. Asia-Pacific Symposium on

Conference_Location

Singapore

Print_ISBN

978-981-08-0629-3

Electronic_ISBN

978-981-08-0629-3

Type

conf

DOI

10.1109/APEMC.2008.4559988

Filename

4559988