GaAs based mid infrared filter with resonant gratings

Author

Yu, K. Chan Shin ; Fehrembach, A.L. ; Lemarchand, F. ; Gauthier-Lafaye, O. ; Monmayrant, A. ; Arguel, P. ; Bonnefont, S. ; Lozes-Dupuy, F. ; Sentenac, A.

Author_Institution

LAAS, Toulouse, France

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

In this contribution, we show that ultranarrow band filters with Q-10⁴ can be developed for MIR applications using the well known GaAs/AlGaAs system. More specifically, we derive design rules to solve the problems brought by the weak index contrast, and high index substrate of GaAs/AlGaAs stacks. We conceive a filter functioning in reflection at the wavelength of 4.65 μm, with specifications that fulfills the requirements for CH4 spectroscopy in embedded systems.

Keywords

III-V semiconductors; aluminium compounds; carbon compounds; diffraction gratings; embedded systems; gallium arsenide; optical filters; visible spectroscopy; CH₄; GaAs; GaAs-AlGaAs; MIR; embedded systems; midinfrared filter; resonant gratings; spectroscopy; ultranarrow band filters; wavelength 4.65 mum; Filtering theory; Gallium arsenide; Gratings; Optimized production technology; Reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5943263

Filename

5943263