Impact of non uniform strain configuration on transport properties for FD14+ devices

As device dimensions are scaled down, the use of non-geometrical performance boosters becomes of special relevance. In this sense, strained channels are proposed for the 14 nm FDSOI node. However this option may introduce a new source of variability since strain distribution inside the channel is not uniform at such scales. In this work, a MSB-EMC study of different strain configurations including non-uniformities is presented showing drain current degradation due to inter-valley interaction.