• DocumentCode
    2075482
  • Title

    Nanotwin-modified copper interconnects and its effect on the physical properties of copper

  • Author

    Xu, Di ; Xu, Luhua ; Sriram, Vinay ; Sun, Ke ; Yang, Jenn-Ming ; Tu, King-Ning

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Univ. of California, Los Angeles, CA
  • fYear
    2009
  • fDate
    26-29 May 2009
  • Firstpage
    2060
  • Lastpage
    2063
  • Abstract
    Cu with high density nanotwins has been proven to possess excellent mechanical properties and electrical properties. In this study, nanotwins have been successfully introduced in Cu thin films and interconnect lines in trenches down to 150 nm line width. Nanoindentation measurements of hardness show that Cu with some amount of nanotwins has much higher hardness than that of bulk Cu. More interestingly, the hardness at the grain boundary area where there are triple points due to the intersection with some twin boundaries seems to be higher than that inside the grains. Nanotwinned Cu has also been investigated under annealing to study the thermal stability of the nanotwin-modified structure. Copper with nanotwins has slower grain growth than the Cu without nanotwins. Moreover, DC electroplated Cu with very few nanotwins undergoes abnormal grain growth at room temperature while the nanotwinned Cu has very little abnormal grain growth and shows much more uniform grain size. We believe that the effect of nanotwins on the physical properties of Cu is related to the change of the grain boundary microstructure when the twin induced triple points are present in the grain boundaries.
  • Keywords
    annealing; copper; electroplating; focused ion beam technology; grain growth; grain size; hardness; interconnections; metallic thin films; nanoindentation; nanotechnology; thermal stability; twin boundaries; Cu; DC electroplation; annealing; grain boundary; grain boundary microstructure; grain growth; grain size; hardness; nanoindentation; nanotwin-modified copper interconnects; size 150 nm; temperature 293 K to 298 K; thermal stability; thin films; twin boundaries; Annealing; Area measurement; Copper; Grain boundaries; Grain size; Mechanical factors; Nanostructures; Temperature; Thermal stability; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-4475-5
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2009.5074307
  • Filename
    5074307