Title :
Determination of the transport parameters in two-dimensional semiconductor systems and thin films by contactless microwave methods
Author :
Kornilovich, A.A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The results of theoretical and experimental study of Shubnikov-de Haas effect and cyclotron resonance by microwave methods (ω/2π=37.8GHz) in AlGaAs/GaAs heterostructures are presented. The theoretical expressions for the determination of the carrier concentration and mobility are obtained. With these data, the transport parameters in two-dimensional systems and thin films can be determined with an accuracy ∼0.5%.
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; carrier mobility; cyclotron resonance; gallium arsenide; millimetre wave measurement; 2D semiconductor systems; 37.8 GHz; AlGaAs-GaAs; Shubnikov-de Haas effect; carrier concentration; carrier mobility; contactless microwave methods; cyclotron resonance; thin films; transport parameters; Cyclotrons; Electron optics; Gallium arsenide; Magnetic resonance; Microwave theory and techniques; Optical films; Optical superlattices; Power measurement; Reflectivity; Semiconductor thin films;
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
DOI :
10.1109/SREDM.2002.1024313
