DocumentCode :
2075807
Title :
The linear piezoresistance effect in p-GexSi1-x alloys
Author :
Dragunov, Valery P. ; Shishkov, Andrey A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Volume :
1
fYear :
2002
fDate :
1-5 July 2002
Abstract :
Based un three-band spectrum model taking into account main scattering mechanisms the concentration dependencies of linear piezoresistance coefficients in p-GexSi1-x alloys were calculated. It is shown that the piezoresistance dependence upon the alloy composition X has a non-monotonous character.
Keywords :
Ge-Si alloys; alloys; elemental semiconductors; impurity distribution; piezoresistance; surface scattering; GeSi; alloy composition; concentration dependence; linear piezoresistance effect; nonmonotonous character; piezoresistance dependence; scattering mechanisms; three-band spectrum model; Acoustic scattering; Capacitive sensors; Fluctuations; Germanium alloys; Impurities; Optical scattering; Piezoresistance; Silicon alloys; Stress; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
Type :
conf
DOI :
10.1109/SREDM.2002.1024314
Filename :
1024314
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2075807
بازگشت