Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

Author

Betti Beneventi, Giovanni ; Reggiani, Susanna ; Gnudi, Antonio ; Gnani, Elena ; Aliane, Alireza ; Collaert, Nadine ; Mocuta, Anda ; Thean, Aaron ; Baccarani, Giorgio

Author_Institution

DEI, Univ. of Bologna, Bologna, Italy

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

241

Lastpage

244

Abstract

A simple analytical model of thin-body In_0.53Ga_0.47As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental C_G-V_gs and I_d-V_gs curves collected on transistors with body thicknesses down to 5 nm.

Keywords

III-V semiconductors; MOSFET; electron mobility; electron-phonon interactions; gallium arsenide; indium compounds; semiconductor device models; surface roughness; surface scattering; technology CAD (electronics); 1-D Schroedinger-Poisson simulations; Coulomb scattering; In_0.53Ga_0.47As-InP; TCAD tools integration; device effective thickness; low-field electron mobility; phonon scattering; surface roughness scattering; technology-CAD; thin-body MOSFET; Analytical models; Data models; Phonons; Rough surfaces; Scattering; Semiconductor device modeling; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063818

Filename

7063818