Title :
The Power Electronics Market and the Status of GaN Based Power Devices
Author :
Briere, Michael A.
Author_Institution :
ACOO Enterprises LLC, Scottsdale, AZ, USA
Abstract :
Focusing on the application range between 20 and 1200 V, a survey is presented of the power electronic marketplace including the principle power device structures and IC technologies as well as circuit topologies used in the major applications. The relation between power device performance and system level capabilities are discussed. Recent results obtained using the commercial GaN- on-Si based HEMT development platform at International Rectifier, known as GaNpowIR®, will be presented.
Keywords :
III-V semiconductors; gallium compounds; power integrated circuits; wide band gap semiconductors; GaN; GaN based power devices; GaNpowIR; HEMT development platform; IC technologies; International Rectifier; circuit topologies; power device performance; power electronic marketplace; power electronics market; principle power device structures; system level capabilities; voltage 20 V to 1200 V; Gallium nitride; Performance evaluation; Power electronics; Rectifiers; Silicon; Switches; Topology;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062462
