Narrow-bandwidth high-brightness single photon emission from silicon-vacancy colour centres in CVD-nano-diamonds

Author

Neu, E. ; Steinmetz, D. ; Arend, C. ; Riedrich-Möller, J. ; Fischer, M. ; Gsell, S. ; Schreck, M. ; Becher, C.

Author_Institution

Fachrichtung 7.2 (Experimentalphys.), Univ. des Saarlandes, Saarbrucken, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

This paper reports the fabrication of bright silicon vacancy (SiV) centres in an advanced material system. The authors use substrates consisting of a layer system of iridium on yttria-stabilized zirconia on silicon . Low density nanodiamond seeding is achieved via spin-coating. The seeded substrates are subjected to a microwave assisted CVD growth, yielding high-quality, spatially isolated nano-diamonds of approximately 100-150 nm in size.

Keywords

CVD coatings; colour centres; diamond; iridium; nanostructured materials; photoemission; silicon; spin coating; vacancies (crystal); yttrium compounds; zirconium compounds; C; CVD; Ir-ZrO₂-Y₂O₃-Si; advanced material system; nanodiamond seeding; nanodiamonds; narrow bandwidth high brightness single photon emission; silicon vacancy colour centres; spin coating;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5943585

Filename

5943585