Title :
Parasitic current mechanisms and current stress induced degradation effects in mesa-isolated, SiGe heterojunction bipolar transistors
Author :
Goh, I.S. ; Hall, S.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Abstract :
We present a study of parasitic current mechanisms apparent in the characteristics of mesa isolated SiGe HBTs and the effects upon these characteristics of degradation initiated by constant reverse current stress of the emitter-base (EB) and base-collector (BC) junctions
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; isolation technology; semiconductor materials; SiGe; base-collector junction; constant reverse current stress; degradation; emitter-base junction; mesa-isolated SiGe heterojunction bipolar transistors; parasitic current;
Conference_Titel :
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950181
