A 90-nm CMOS two-stage low-noise amplifier for 3-5-GHz ultra-wideband radio

A wideband low-noise amplifier for 3-5-GHz UWB applications is presented. The circuit was fabricated in a 90-nm CMOS process. It consists of a complementary PMOS / NMOS pair, which provides wideband input matching, while the second stage adopts a transformer-loaded cascode topology. The amplifier achieves a power gain of 13.5 dB and a 3.1-to-5.9-GHz 3-dB gain bandwidth, while it features a noise figure of 2.8 dB. Wideband S-parameter measurements reveal excellent input matching and high reverse isolation in the whole UWB frequency range, i.e. 3.1 to 10.6 GHz. The circuit draws only 4.5 mA from a 1.2-V supply voltage.