DocumentCode
2083167
Title
Heavy Ion Single Event Effects Performance of RadHard Devices Migrated to an Alternate Wafer Fab
Author
Hafer, Craig ; Lahey, Mike ; Harris, Debra ; Larsen, Jennifer ; Sievert, Fred ; Sims, Tony ; Meyer, Steve ; Dumitru, Radu ; Jordan, Anthony ; Milliken, Peter
Author_Institution
Aeroflex Colorado Springs, Colorado Springs, CO, USA
fYear
2011
fDate
25-29 July 2011
Firstpage
1
Lastpage
8
Abstract
Aeroflex mitigates the concern of IC part obsolescence by migrating RadHard devices to alternate wafer fabs as fabs become shuttered or unavailable. Comparison radiation performance data are presented for recently migrated devices.
Keywords
CMOS digital integrated circuits; radiation effects; CMOS technology; RadHard devices; aeroflex; alternate wafer fab; heavy ion single event effects performance; wafer fabs; Application specific integrated circuits; Arrays; Logic gates; Performance evaluation; Power supplies; Springs; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location
Las Vegas, NV
ISSN
2154-0519
Print_ISBN
978-1-4577-1281-4
Type
conf
DOI
10.1109/REDW.2010.6062506
Filename
6062506
Link To Document