Title :
Prospects for the exploitation of SiGe technologies
Author :
Kearney, M.J. ; Ingram, S.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Loughborough Univ. of Technol., UK
Abstract :
We examine the prospects for the exploitation of SiGe technologies, paying particular attention to the element of competition provided by GaAs and by the continually improving level of performance expected of more conventional Si technologies
Keywords :
Ge-Si alloys; semiconductor materials; semiconductor technology; SiGe; SiGe technologies;
Conference_Titel :
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950177
