DocumentCode
2086493
Title
Application of TCAD software for numerical simulation of power semiconductor devices
Author
Langer, Malgorzata ; Podgórski, Jacek
Author_Institution
Inst. of Electron., Tech. Univ. Lodz, Poland
fYear
2001
fDate
12-17 Feb. 2001
Firstpage
305
Lastpage
306
Abstract
The author presents a review of simulation and modeling possibilities, both for semiconductor device structures and process technologies. ISE TCAD software is introduced to illustrate some examples.
Keywords
graphical user interfaces; insulated gate bipolar transistors; power MOSFET; semiconductor device models; semiconductor process modelling; technology CAD (electronics); GENESISe graphical interface; IGBT; ISE TCAD software; TCAD software; VDMOS; numerical simulation; power semiconductor devices; review; semiconductor device modeling; semiconductor process modeling; Application software; Current distribution; Design automation; Doping profiles; Flowcharts; Insulated gate bipolar transistors; Mesh generation; Numerical simulation; Power semiconductor devices; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
CAD Systems in Microelectronics, 2001. CADSM 2001. Proceedings of the 6th International Conference. The Experience of Designing and Application of
Conference_Location
Lviv-Slavsko, Ukraine
Print_ISBN
966-553-079-8
Type
conf
DOI
10.1109/CADSM.2001.975850
Filename
975850
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