Title :
Characterization of optical integrated neuron
Author :
Javan, Hank ; Spurlin, John
Author_Institution :
Dept. of Electron. & Comput. Technol., North Carolina A&T State Univ., Greensboro, NC, USA
Abstract :
This paper introduces an analytical expression for the output power of a recently developed GaAs MESFET integrated optical neuron. Our expression shows that output power depends on the threshold voltage and device parameters of driving MESFET. Analytical results are compared with experimental values of NASA scientists. Agreement is satisfactory
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated optoelectronics; neural chips; optical neural nets; GaAs; GaAs MESFET; device parameters; optical integrated neuron; output power; threshold voltage; Circuits; Equations; FETs; Gallium arsenide; Integrated optics; Light emitting diodes; MESFETs; Neurons; Power generation; Threshold voltage;
Conference_Titel :
Southeastcon '94. Creative Technology Transfer - A Global Affair., Proceedings of the 1994 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
0-7803-1797-1
DOI :
10.1109/SECON.1994.324362
