DocumentCode
2089945
Title
New method of global planarization for Si ULSI
Author
Prybyla, J.A. ; Taylor, G.N.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1994
fDate
7-9 June 1994
Firstpage
75
Lastpage
76
Abstract
In this paper, a new method for obtaining global planarization of patterned Si ULSI wafers is described. This method is unique in that it is very simple, clean, and potentially high throughput. Here we report on the excellent planarization results obtainable. The key idea is a contact scheme for applying and planarizing a sacrificial layer over the patterned wafer. A critical element has been the use of an optical flat coated with a monolayer of release agent.<>
Keywords
VLSI; elemental semiconductors; integrated circuit technology; silicon; surface treatment; Si; Si ULSI; contact scheme; global planarization; monolayer; optical flat; patterned wafers; release agent; sacrificial layer; throughput; Curing; Etching; Fabrication; Optical materials; Optical polymers; Planarization; Surfaces; Testing; Throughput; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324370
Filename
324370
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