Author :
Lorusso, G.F. ; Collaert, N. ; Rooyackers, R. ; Ercken, M. ; Pollentier, I. ; Cheng, S. ; Degroote, B. ; Jurczak, M. ; Biesemans, S. ; Richard, O. ; Bender, H. ; Azordegan, A. ; Kuppa, R. ; Shirke, S. ; Prochazka, J. ; Long, T.
Abstract :
We describe a procedure to calibrate CD SEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70 nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10 nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.
Keywords :
calibration; field effect transistors; nanoelectronics; scanning electron microscopy; semiconductor device manufacture; semiconductor device measurement; size measurement; transmission electron microscopy; 10 to 70 nm; MuGFET devices; SEM measurement; TEM analysis; critical dimension calibration; multigate field effect transistors; Calibration; Etching; Lattices; Metrology; NIST; Production; Scanning electron microscopy; Silicon; Standards development; Very large scale integration;
