DocumentCode :
2090148
Title :
A novel disposable post technology for self-aligned sub-micron contacts
Author :
Cleeves, M. ; Ramkumar, K. ; Gettle, R.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
fYear :
1994
fDate :
7-9 June 1994
Firstpage :
61
Lastpage :
62
Abstract :
A novel VLSI contact technology is proposed which uses disposable photoresist posts to define the contact regions. This technology which does not use any contact etch process completely removes the requirements for a high etch selectivity material in the contacts. It is ideally suited for forming self aligned contacts without damaging the underlying silicon or silicide.<>
Keywords :
DRAM chips; SRAM chips; VLSI; integrated circuit technology; metallisation; photoresists; VLSI contact technology; contact regions; disposable post technology; photoresist posts; self-aligned sub-micron contacts; Chemical technology; Chemistry; Dielectrics; Etching; Random access memory; Resists; Semiconductor materials; Silicides; Silicon; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
Type :
conf
DOI :
10.1109/VLSIT.1994.324377
Filename :
324377
Link To Document :
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