Title :
A charge correction cell for FGMOS-based circuits
Author :
Rodríguez-Villegas, Esther O. ; Yúfera, Alberto ; Rueda, Adoración
Author_Institution :
Instituto de Microelectron. de Sevilla, Univ. de Sevilla, Spain
Abstract :
This paper describes a novel cell used in circuits with floating gate MOS transistors (FGMOS) to compensate for variations in the device effective threshold voltage caused by the trapped charge at the floating gate. The performance of the circuit is illustrated with experimental results showing a residual error below 1%. This coarse compensation makes it possible to reduce charge effects to the same order of magnitude as the conventional mismatching in normal MOS transistors.
Keywords :
MOS integrated circuits; compensation; integrated circuit design; FGMOS-based circuits; charge correction cell; charge effects compensation; device effective threshold voltage variations; floating gate MOS transistors; floating gate charge correction; floating gate trapped charge; Capacitance; Cleaning; Electromagnetic radiation; Electron traps; Impedance; Integrated circuit technology; MOSFETs; Silicon; Switches; Threshold voltage;
Conference_Titel :
Integrated Circuits and Systems Design, 2003. SBCCI 2003. Proceedings. 16th Symposium on
Print_ISBN :
0-7695-2009-X
DOI :
10.1109/SBCCI.2003.1232828
