Assured epitaxial CoSi/sub 2/ phase formation on (001) Si-on-insulator substrates using CoSi/Ti bimetallic source materials

Author

Hsia, S.L. ; Tan, T.Y. ; Smith, P.L. ; McGuire, G.E.

Author_Institution

Dept. of Mech. Eng. & Mater. Sci., Duke Univ., Durham, NC, USA

fYear

1994

fDate

7-9 June 1994

Firstpage

123

Lastpage

124

Abstract

We report an assured way of forming epitaxial CoSi/sub 2/ films on (001) SOI Si substrates when Co is inexhaustible. This is to use bimetallic CoSi/Ti source materials. For the more commonly used Co/Ti source material, epitaxial CoSi/sub 2/ film forms before the Si layer is fully consumed. After the SOI Si has been fully consumed, however, pre-formed epitaxial CoSi/sub 2/ reverted back to polycrystalline CoSi, leading to a dramatic sheet resistance increase. This phase reversal phenomenon arises because in using atomic Co as source material, the Gibbs free energy reduction in forming the CoSi and CoSi/sub 2/ phases is not too different and consequently CoSi becomes the energetically favorable end phase when Co is still available after all Si atoms have been consumed. In using CoSi as the Co source material, the only energetically favorable reaction is to form CoSi/sub 2/.<>

Keywords

cobalt compounds; insulated gate field effect transistors; metallic epitaxial layers; metallisation; semiconductor technology; semiconductor-insulator boundaries; silicon; CoSi/Ti bimetallic source materials; CoSi/sub 2/; Gibbs free energy reduction; MOSFETs; [001] Si-on-insulator substrates; device fabrication; energetically favorable end phase; epitaxial CoSi/sub 2/ phase formation; phase reversal phenomena; polycrystalline CoSi; sheet resistance; silicided regions; Annealing; Atomic layer deposition; MOSFET circuits; Materials science and technology; Mechanical engineering; Microelectronics; Semiconductor films; Sheet materials; Silicides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324426

Filename

324426