DocumentCode :
2091568
Title :
“ S-shaped ” photoluminescence emission shift in Cu(In,Ga)Se2 thin films
Author :
Liao, Y.K. ; Kuo, S.Y. ; Lai, F.I. ; Lin, W.T. ; Hsieh, D.H. ; Chiu, D.W. ; Kuo, H.C.
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
2
Abstract :
We have utilized photoluminescence (PL) measurement to investigate carrier recombination mechanism in Cu(In,Ga)Se2 thin films and observed an S-shaped emission shift revealed from the corresponding PL peak of near band edge transition.
Keywords :
copper compounds; gallium compounds; indium compounds; photoluminescence; semiconductor thin films; spectral line shift; ternary semiconductors; Cu(InGa)Se2; S-shaped emission shift; carrier recombination mechanism; near band edge transition; photoluminescence; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510712
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2091568
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