Title :
Low parasitic resistance technologies with NES-SAC and SWT-CVD process for low supply voltage, high speed BiCMOS SRAMs
Author :
Ishigaki, Y. ; Kuriyama, H. ; Honda, H. ; Kohno, Y. ; Tsuchimoto, J. ; Sakamori, S. ; Kinoshita, A. ; Hirose, T. ; Ohbayashi, S. ; Ashida, M. ; Matsuo, H. ; Miyoshi, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
The nitride etch stop self align contact (NES-SAC) process, the single wafer type (SWT-CVD) process and the modified fabrication method of bipolar transistors suitable for low supply voltage, high performance BiCMOS SRAMs are presented. Using these technologies, very small resistance contacts, small resistance ground lines and high performance bipolar transistors with small emitter resistance are achieved. Hence, a 1 M (64k/spl times/18) TTL SRAM with stable cell operation at 1.8 V and high speed access time of 7.8 ns is realized. These technologies are effective for the sub-half micron low supply voltage BICMOS SRAMs.<>
Keywords :
BiCMOS integrated circuits; SRAM chips; bipolar transistors; chemical vapour deposition; integrated circuit technology; nitridation; surface treatment; transistor-transistor logic; 1 Mbit; 3 V; 3.4 mum; 5 mum; 7.8 ns; 70 C; NES-SAC; SWT-CVD process; TTL SRAM; bipolar transistors; high performance BiCMOS SRAMs; high performance bipolar transistors; high speed BiCMOS SRAMs; high speed access time; low parasitic resistance technologies; low supply voltage; modified fabrication method; nitride etch stop self align contact process; single wafer type CVD process; small emitter resistance; small resistance ground lines; stable cell operation; sub-half micron low supply voltage BICMOS SRAMs; very small resistance contacts; BiCMOS integrated circuits; Bipolar transistors; Contact resistance; Dry etching; Electrodes; Heat treatment; Immune system; Low voltage; Resistance heating; Temperature;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324436
